Journal Home Online First Current Issue Archive For Authors Journal Information 中文版

Strategic Study of CAE >> 2002, Volume 4, Issue 6

Packaging of Micro Electro Mechanical Systems Based on Bulk Silicon Bonding and Film Sealed Technology

State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem & Information Technology, Chinese Academy of Sciences , Shanghai 200050, China

Funding project:国家重点基础研究发展规划资助项目(G1999033101) Received: 2001-08-28 Revised: 2001-11-22 Available online: 2018-06-20

Next Previous

Abstract

The packaging of micro electro mechanical systems (MEMS) is referred to first-level packaging and limited generally to the preservation of wafer in this paper. It is based on bulk silicon bonding technology and film sealed technology. The bulk silicon bonding technology includes electrostatic bonding, silicon direct bonding and interfacial layer assisted bonding. It is used for making material acting as substrate or cover of the chip. The film sealed technology includes whole-wafer operation, local-wafer operation and selective preservation. It is used to seal micro channel or micro hole to form a vacuum or low-pressure cavity or protect from atmosphere influence. The very high importance not to forget packaging at the beginning of a project, when hoping to industrialize MEMS is discussed. In order to obtain high performance-price ratio,it is necessary to weigh the device performance against the chip complexity. The commercialized pressure sensors, accelerometers, digital micro mirror devices, etc., collected from literatures are used as examples.

Figures

图1

图2

图3

图4

图5

图6

References

[ 1 ] DelapierreG .MEMSandmicrosensors, fromlaboratorytocommercialization[A].Proceedingof10thInterna tionaConferenceonSolidStateSensorsandActuators[C], Transsducers’99, Sendai, Japan, PaperNumber1A2, 1999

[ 2 ] SenturiaST , SmithRL .Microsensorpackagingandsystempartitioning[J].SensorsandActuators, 1988, 15:221~234

[ 3 ] TabatO , ShimaokaK , AsashiR , etal.Micromachinedsensorsusing polysiliconsacrificialetchingtechnology[J].SensorsMaterials, 1996, (8) :57~67

[ 4 ] GielesACM , SomersGHJ .Miniaturepressuretrans ducerwithsilicondiaphragm[J].PhilipsTechRev1973, 33:14;TufteON , ChapmanPW , LongD .Silicondiffusedelementpiezoresistivediaphragms[J].JApplPhys, 1962, 33:322;ClarkSK , WiseKD .Pressuresensitivityinanisotropicallyetchedthin di aphragmpressuresensors[J].IEEETransElectronDe vices, 1979, ED 26:1887

[ 5 ] KoWH , SumintoJT , YehGJ.Micromachiningandmicropackagingoftransducers[M ].ElesevierSciencePublishers, 1985

[ 6 ] WallsG , PomerantzD .Fieldassistedglass metalseal ing[J].JApplPhys, 1969, 40:3946~3949

[ 7 ] 黄庆安.硅微机械加工技术[M ].北京:科学出版社, 1996.207~228 link1

[ 8 ] EsashiM , SugiyamaS , IkedaK , etal.Vacuum sealedsiliconmicromachinedpressuresensors[J].ProcIEEE , 1998, 86:1627~1639

[ 9 ] KobayashiS , HaraT , OguchiT , etal.Double framesilicongyroscopepackagedunderlowpressurebywaferbonding[A].Proceedingof10thInternationalConfer enceonSolidStateSensorsandActuators[C], Trans ducers’99, Sendai, Japan, PaperNumber3D1.3, 1999

[10] LaskyJB .Silicon insulatorbybondingandetchback[A].Proc.IEDM [C], Washington, USA , 1985.684~687;ShimboM , KurukawaF , FukudaF , etal.Silicontosilicondirectbondingmethod[J].JApplPhys, 1986, 60:2987

[11] JiaoJW , LuDR , XiongB , etal.LowtemperatureSDBandinterfacebehavior[J], SensorsandActuators, 1995, A50:117~120;焦继伟, 陆德仁, 王渭源.低温SDB技术研究及表面吸附态的影响[J].半导体学报, 1994, 15:795~798 link1

[12] PetersenK , BarthP , PoydockJ.Siliconfusionbondingforpressuresensors[A].Rec.IEEESolidStateSen sorsandActuatorsWorkshop[C], 1988:144~147;BarthP .Siliconfusionbondingforfabricationofsen sors, actuatorsandmicrostructures[J].SensorsandActuators, 1990, A2123:919

[13] QuenzerHJ, SchulzAV , KinkopfT , etal.Anodicbondingonglasslayerpreparedbyaspin onglasspro cess[A].Proceedingof11thInternationalConferenceonSolid stateSensorsandActuators[C], Transducers01, Munich, Germany, 2001:230~233

[14] WeichelS , deReusR , BouaidatS , etal.Lowtemper atureanodicbondingtosiliconnitride[A].Proceedingof10thInternationalConferenceonSolid stateSensorsandActuators[C], Transsducers’99, Sendai, Japan, PaperNumber3P1.16, 1999

[15] NeseM , HanneborgA .Anodicbondingofsilicontosil iconwaferscoatedwithaluminum, siliconoxide, polysiliconorsiliconnitride[J].SensorsandActuators, 1993, A 3738:61~67

[16] ChiaoM , LinLW .Acceleratedhermeticitytestingofglass siliconpackageformedbyaluminum to siliconni tridebonding[A].Proceedingof11thInternationalConferenceonSolidStateSensorsandActuators[C], Transducers’01, Munich, Germany.2001:182~185

[17] BertholdA , NicolaL , SarroPM , etal.Anoveltech nologicalprocessforglass to glassanodicbonding[A].Proceedingof10thInternationalConferenceonSolid stateSensorsandActuators[C], Transsducers99, Sendai, JapanPaperNumber4A4.41999

[18] HoweRT .Surfacemicromachiningformicrosensorsandmicroactuators[J].JVacSciTechnol, 1988, B 6:1809~1813

[19] KuennelW , ShermanS .Asurfacemicromachinedsili conaccelerometerwithon chipdetectioncircuitry[J].SensorsandActuators, 1994, A 45:7~16

[20] SampellJB .Thedigitalmicromirrordevicesanditsap plicationtoprojectiondisplays[A].Proceedingof8thInternationalConferenceonSolid stateSensorsandAc tuators[C], Transducers’93, Yokohama, Japan.1993:24~29;DouglassMR .WhyistheTexasIn strumentsdigitalmicromirrordevices (DMD) soreliable[DB/OL].http://www.ti.com/dlp.

[21] AignerR , OppermannKG , KapelsH , etal.Cavity micromachiningtechnology:Azero packagesolutionforinertialsensors[A].Proceedingof11thInternationalConferenceonSolid stateSensorsandActuators[C], Transducers01, Munich, Germany, 2001.186~189

[22] HeGH , LinLW , ChengYT .LocalizedCVDbond ingforMEMSpackaging[A].Proceedingof10thIn ternationalConferenceonSolid stateSensorsandActua tors[C], Transducers’99, Sendai, Japan, PaperNumber4A4.1, 1999

[23] ChangChienPP , WiseKD .Wafer levelpackagingusinglocalizedmassdeposition[A].Proceedingof11thInternationalConferenceonSolid stateSensorsandAc tuators[C], Transducers’01, Munich, Germany, 2001.182~185

[24] 王渭源.影响微电子机械系统成品率和可靠性的粘合力和摩擦力[J].中国工程科学, 2000, 2 (3) :36~41 link1

[25] LiG , SchmeisingJ , McNeilA , etal.Selectiveencap sulationusingapolymetricorbondedsiliconconstraintdamformediacompatiblepressuresensorapplications[A].Proceedingof11thInternationalConferenceonSolid stateSensorsandActuators[C], Transducers01, Munich, Germany, 2001.178~181

[26] KrassowH , CampabadalF , TamayoEL .Waferlevelpackagingofsiliconpressuresensors[A].Proceedingof10thInternationalConferenceonSolid stateSensorsandActuators[C], Transsducers99, Sendai, Japan, PaperNumber3P1.9, 1999

[27] ReynoldsJK , CatlingDC , BlueRC , etal.Packagingandcalibrationofapiezoresistivepressuresensorforhighaccuracyatlowtemperaturesandpressures[A].Pro ceedingof10thInternationalConferenceonSolid stateSensorsandActuators[C], Transducers99, Sendai, Japan, PaperNumber3P1.22, 1999

Related Research