典型纳米结构制备及其测量表征
1. 西安交通大学机械工程学院,西安 710049;
2. 西安交通大学机械制造系统工程国家重点实验室,西安 710049
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摘要
针对纳米器件中的典型几何特征,制备了3种纳米结构,采用扫描电子显微镜(SEM)、原子力显微镜(AFM)等测量工具对所制备的纳米样板进行了测量、分析和表征。提出转换薄膜厚度为线宽的公称值、基于多层薄膜淀积技术制备纳米宽度结构的方法,制备出了具有名义线宽尺寸分别为20 nm、25 nm、35 nm的纳米栅线结构。用离线的图像分析算法对所制备的纳米线宽样板的线边缘粗糙度/线宽粗糙度(LER/LWR)以及栅线线宽的一致性进行了评估。实验表明所制备纳米线宽样板的栅线具有较好的一致性,LER/LWR值小,且具有垂直的侧壁。采用电子束直写技术(EBL)和感应耦合等离子体刻蚀(ICP)制备了名义高度为220 nm的硅台阶样板。实验表明刻蚀后栅线边缘LER/LWR的高频成分减少,相关长度变长,均方根偏差值(σ)增大。采用聚焦离子束(FIB)制备了纳米单台阶和多台阶结构,并对Z方向的尺度与加工能量之间的关系进行了分析。
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