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Frontiers in Energy >> 2017, Volume 11, Issue 1 doi: 10.1007/s11708-016-0442-6
Statistical analysis of recombination properties of the boron-oxygen defect in p-type Czochralski silicon
School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW 2052, Australia
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Keywords
Czochralski silicon ; boron-oxygen defect ; injection dependent lifetime spectroscopy ; goodness-of-fit ; repeatability error
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