2000, Volume 2, Issue 5
Strategic Study of CAE >> 2000, Volume 2, Issue 5
How to Transfer MBE GaAs-based Microstructural Materials from Research to Mass Production
Institute of Semiconductors , Chinese Academy of Sciences,Beijing 100083, China
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Abstract
Novel microelectronic devices, such as HEMT and PHEMT, etc. , which are based on molecular beam epitaxial (MBE) GaAs-based microstructures, have found widespread applications in modern day information technology. These devices have already been commercialized in some foreign countries. In China, continuous endeavor since mid-80, s in making GaAs-based microstructural materials by MBE has led to successful realizations of many such novel devices. Notably, the HEMT and PHEMT devices made from microstructural materials grown by MBE in Institute of Semiconductors, Chinese Academy of Sciences have demonstrated very good performances approaching the world-best. This paper aims at exploring the ways by which such research results can be transferred from laboratory to market.
Keywords
MBE ; GaAs-based microstructure materials ; PHEMT ; high technology industry
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