2009, Volume 11, Issue 11
Strategic Study of CAE >> 2009, Volume 11, Issue 11
Research on two typical intense current self-pinching diodes
Northwest Institute of Nuclear Technology, Xi'an 710024, China
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Abstract
Structures of several types of intense pinching diodes were introduced. The latest simulation and experiment results on rod pinch focusing diodes were introduced. Experimental researches were carried out on FLASH Ⅱ and 2 MV pulsed power drivers. The voltage of RPD is 1.8~2.1 MV, the current is 40~60 kA, the FWHM is 50~60 ns. The X-ray dose at 1 m from the diode in the forward direction was about 20~30 mGy. The spot diameter was about 1 mm, the maximum energy was 1.8 MeV. The preliminary research results for generation and application of high power ion beam (HPIB) on the FLASH Ⅱaccelerator were reported. The structure and principle of pinch reflex ion beam diode were introduced. The HPIB peak current of ~160 kA is obtained with a peak energy of ~500 keV. The experimental investigations of generating 6~7 MeV quasi-monoenergetic pulsed γ-rays with high power ion (proton) beams striking 19F target are presented. In addition, the research results for thermal-mechanical effects on the material irradiated with HPIB applied to simulation X-ray were also discussed.
Keywords
rod-pinch diode ; ion beam diode ; X-ray ; high power ion beam ; pinch ; focus
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