资源类型

期刊论文 8

年份

2019 3

2017 1

2016 1

2013 1

2011 1

2006 1

关键词

HEMTs);栅槽;数字湿法腐蚀;选择性湿法腐蚀 1

仿真器 1

分形几何;层状金属屏蔽;涡流效应;磁耦合能量传输 1

各向异性腐蚀 1

1

角速度 1

高电子迁移率晶体管(High electron mobility transistors 1

展开 ︾

检索范围:

排序: 展示方式:

Self-etching adhesives: possible new pulp capping agents to vital pulp therapy

null

《医学前沿(英文)》 2011年 第5卷 第1期   页码 77-79 doi: 10.1007/s11684-010-0104-8

摘要:

Pulp capping is one of the solving for keeping vital pulp in the case of dentin caries, reversible pulpitis or traumatic pulp exposure. The presence of bacteria on the cavity walls or in the pulp was the major factor that leads to the failure of pulp capping. Traditional pulp capping agent, calcium hydroxide, may not prevent microleakage. Self-etching system is a newly developed adhesive system, which could provide less microleakage and would not break down or dissolve, preventing the oral fluids and bacteria from the pulp along the cavity wall. This may reduce such clinical problems as postoperative sensitivity, secondary caries and marginal discoloration. Researches showed that some kinds of self-etching adhesives induced the mild to moderate inflammatory pulp response, with negative bacterial staining. Inclusion of antibacterial components into self-etching system, such as 12- methacryloyloxydodecylpyridinium bromide (MDPB) may inhibit bacteria and provide better clinical effects. It is speculated that using the self-etching adhesive system containing the antibacterial agent, such as MDPB, to the dental pulp directly or indirectly, may inhibit bacteria after the placement of restoration as well as residual bacteria in the cavity.

关键词: dental pulp     pulp capping     self-etching adhesives     antibacterial components    

Low-k integration: Gas screening for cryogenic etching and plasma damage mitigation

Romain Chanson, Remi Dussart, Thomas Tillocher, P. Lefaucheux, Christian Dussarrat, Jean François de Marneffe

《化学科学与工程前沿(英文)》 2019年 第13卷 第3期   页码 511-516 doi: 10.1007/s11705-019-1820-5

摘要: The integration of porous organo-silicate low- materials has met a lot of technical challenges. One of the main issues is plasma-induced damage, occurring for all plasma steps involved during interconnects processing. In the present paper, we focus on porous SiOCH low- damage mitigation using cryogenic temperature so as to enable micro-capillary condensation. The aim is to protect the porous low- from plasma-induced damage and keep the -value of the material unchanged, in order to limit the RC delay of interconnexion levels while shrinking the microchip dimension. The cryogenic temperature is used to condense a gas inside the porous low- material. Then, the etching process is performed at the temperature of condensation in order to keep the condensate trapped inside the material during the etching. In the first part of this work, the condensation properties of several gases are screened, leading to a down selection of five gases. Then, their stability into the porous structure is evaluated at different temperature. Four of them are used for plasma damage mitigation comparison. Damage mitigation is effective and shows negligible damage for one of the gases at –50°C.

关键词: low-k     nanotechnology     micro-electronics     cryo-etching     plasma processing    

A chemical etching route to controllable fabrication of TiO

Weixin ZHANG, Jie XING, Zeheng YANG, Mei KONG, Hongxu YAO

《化学科学与工程前沿(英文)》 2013年 第7卷 第2期   页码 192-201 doi: 10.1007/s11705-013-1319-4

摘要: The TiO hollow nanospheres with diameters of about 230 nm were prepared by a simple and controllable route based on hydrolysis of Ti(OBu) on the surfaces of the Cu O solid nanospheres followed by inward etching of the Cu O nanospheres. The as-prepared samples were characterized by X-ray diffraction, transmission electron microscopy and scanning electron microscopy. The further post-heat treatment led to the high crystallization of the TiO hollow nanospheres. The photocatalytic performances of these samples were evaluated for the photodegradation of rhodamine B (RhB) under UV-light irradiation. The as-prepared TiO hollow nanospheres showed higher photocatalytic activity than the CuO and the CuO/TiO hollow nanospheres. Effects of temperature and time for post-heat treatment of TiO as well as initial RhB concentrations on the RhB photodegradation have also been studied. The results show that the TiO hollow nanospheres have the good reusability as photocatalysts and are promising in waste water treatment.

关键词: TiO2     hollow nanospheres     rhodamine B     photocatalytic activity    

结合选择性和数字湿法腐蚀的InAlAs/InGaAs InP基HEMTs两步栅槽腐蚀工艺 Article

Ying-hui ZHONG, Shu-xiang SUN, Wen-bin WONG, Hai-li WANG, Xiao-ming LIU, Zhi-yong DUAN, Peng DING, Zhi JIN

《信息与电子工程前沿(英文)》 2017年 第18卷 第8期   页码 1180-1185 doi: 10.1631/FITEE.1601121

摘要: 本文针对InAlAs/InGaAs InP基高电子迁移率晶体管(HEMTs)提出了一种结合高选择性湿法腐蚀和非选择性数字湿法腐蚀的两步栅槽腐蚀工艺。通过采用丁二酸和双氧水(H2O2)混合溶液,InGaAs与InAlAs材料的腐蚀选择比可以超过100。该选择性湿法腐蚀工艺在InAlAs/InGaAs InP基HEMTs栅槽工艺中得到了很好的验证,栅槽腐蚀会自动终止在InAlAs势垒层。本文通过分离氧化/去氧化过程开发了非选择性数字湿法腐蚀工艺,每个周期能除去1.2 nm InAlAs材料。最终,两步栅槽腐蚀工艺被成功用于器件制备中,数字湿法腐蚀重复两个周期去掉约3 nm InAlAs势垒层材料。通过该方法制备的InP基HEMTs器件比只依靠选择性湿法腐蚀栅槽工艺制备出的器件具有更短的栅沟间距,表现出更好的有效跨导和射频特性。

关键词: 高电子迁移率晶体管(High electron mobility transistors     HEMTs);栅槽;数字湿法腐蚀;选择性湿法腐蚀    

Review of the damage mechanism in wind turbine gearbox bearings under rolling contact fatigue

Yun-Shuai SU, Shu-Rong YU, Shu-Xin LI, Yan-Ni HE

《机械工程前沿(英文)》 2019年 第14卷 第4期   页码 434-441 doi: 10.1007/s11465-018-0474-1

摘要: Wind turbine gearbox bearings fail with the service life is much shorter than the designed life. Gearbox bearings are subjected to rolling contact fatigue (RCF) and they are observed to fail due to axial cracking, surface flaking, and the formation of white etching areas (WEAs). The current study reviewed these three typical failure modes. The underlying dominant mechanisms were discussed with emphasis on the formation mechanism of WEAs. Although numerous studies have been carried out, the formation of WEAs remains unclear. The prevailing mechanism of the rubbing of crack faces that generates WEAs was questioned by the authors. WEAs were compared with adiabatic shear bands (ASBs) generated in the high strain rate deformation in terms of microstructural compositions, grain refinement, and formation mechanism. Results indicate that a number of similarities exist between them. However, substantial evidence is required to verify whether or not WEAs and ASBs are the same matters.

关键词: rolling contact fatigue (RCF)     white etching area (WEA)     white etching crack (WEC)     adiabatic shear band (ASB)    

旋转体自身驱动的硅微机械陀螺

张福学,毛旭,张伟

《中国工程科学》 2006年 第8卷 第8期   页码 23-27

摘要:

报道了一种利用旋转体自身角速度作为驱动力,通过各向异性刻蚀硅片制作的硅微机械陀螺。介绍了该陀螺敏感结构(硅摆)的设计、制作与封装工艺,用仿真器测试了旋转体的角速率。模拟试验和性能测试表明,该陀螺结构原理正确,可用于敏感旋转体的偏航或俯仰角速度,以及旋转体自身的角速度。

关键词:     各向异性腐蚀     角速度     仿真器    

A non-lithographic plasma nanoassembly technology for polymeric nanodot and silicon nanopillar fabrication

Athanasios Smyrnakis, Angelos Zeniou, Kamil Awsiuk, Vassilios Constantoudis, Evangelos Gogolides

《化学科学与工程前沿(英文)》 2019年 第13卷 第3期   页码 475-484 doi: 10.1007/s11705-019-1809-0

摘要: In this work, we present plasma etching alone as a directed assembly method to both create the nanodot pattern on an etched polymeric (PMMA) film and transfer it to a silicon substrate for the fabrication of silicon nanopillars or cone-like nanostructuring. By using a shield to control sputtering from inside the plasma reactor, the size and shape of the resulting nanodots can be better controlled by varying plasma parameters as the bias power. The effect of the shield on inhibitor deposition on the etched surfaces was investigated by time-of-flight secondary ion mass spectroscopy (ToF-SIMS) measurements. The fabrication of quasi-ordered PMMA nanodots of a diameter of 25 nm and period of 54 nm is demonstrated. Pattern transfer to the silicon substrate using the same plasma reactor was performed in two ways: (a) a mixed fluorine-fluorocarbon-oxygen nanoscale etch plasma process was employed to fabricate silicon nanopillars with a diameter of 25 nm and an aspect ratio of 5.6, which show the same periodicity as the nanodot pattern, and (b) high etch rate cryogenic plasma process was used for pattern transfer. The result is the nanostructuring of Si by high aspect ratio nanotip or nanocone-like features that show excellent antireflective properties.

关键词: plasma     nanoassembly     etching     nanodots     nanopillars     nanofabrication    

基于分形图案蚀刻屏蔽金属提高磁耦合能量传输效率

Qing-feng LI,Shao-bo CHEN,Wei-ming WANG,Hong-wei HAO,Lu-ming LI

《信息与电子工程前沿(英文)》 2016年 第17卷 第1期   页码 74-82 doi: 10.1631/FITEE.1500114

摘要: 薄金属板通常位于磁耦合能量传输(MCET)系统的耦合路径中。金属中的涡流会降低能量传输效率,甚至可能带来安全隐患。本文介绍了在金属中使用蚀刻的分形图案来抑制涡流并提高效率。仿真和实验结果表明该方法非常有效。分形图案应满足三个特征,即,破坏金属边缘,在高强度磁场区域中进行蚀刻以及在厚度方向上贯穿金属进行蚀刻。不同的分形模式导致不同的结果。通过改变涡流分布,当金属表现出电阻效应时,分形图案槽可减少涡流损耗,而当金属表现出电感效应时,分形图案槽可抑制金属中的感应磁场。多层高电导率金属(例如Cu)中的分形图案缝隙显着降低了感应磁场强度。此外,随着蚀刻层数的增加,传递功率,传递效率,接收效率和涡流损耗都增加。这些结果可通过有效的能量传输和在金属屏蔽设备中的安全使用而使MCET受益。

关键词: 分形几何;层状金属屏蔽;涡流效应;磁耦合能量传输    

标题 作者 时间 类型 操作

Self-etching adhesives: possible new pulp capping agents to vital pulp therapy

null

期刊论文

Low-k integration: Gas screening for cryogenic etching and plasma damage mitigation

Romain Chanson, Remi Dussart, Thomas Tillocher, P. Lefaucheux, Christian Dussarrat, Jean François de Marneffe

期刊论文

A chemical etching route to controllable fabrication of TiO

Weixin ZHANG, Jie XING, Zeheng YANG, Mei KONG, Hongxu YAO

期刊论文

结合选择性和数字湿法腐蚀的InAlAs/InGaAs InP基HEMTs两步栅槽腐蚀工艺

Ying-hui ZHONG, Shu-xiang SUN, Wen-bin WONG, Hai-li WANG, Xiao-ming LIU, Zhi-yong DUAN, Peng DING, Zhi JIN

期刊论文

Review of the damage mechanism in wind turbine gearbox bearings under rolling contact fatigue

Yun-Shuai SU, Shu-Rong YU, Shu-Xin LI, Yan-Ni HE

期刊论文

旋转体自身驱动的硅微机械陀螺

张福学,毛旭,张伟

期刊论文

A non-lithographic plasma nanoassembly technology for polymeric nanodot and silicon nanopillar fabrication

Athanasios Smyrnakis, Angelos Zeniou, Kamil Awsiuk, Vassilios Constantoudis, Evangelos Gogolides

期刊论文

基于分形图案蚀刻屏蔽金属提高磁耦合能量传输效率

Qing-feng LI,Shao-bo CHEN,Wei-ming WANG,Hong-wei HAO,Lu-ming LI

期刊论文