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多晶硅 3

微反应器 2

微合金化 2

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晶体硅太阳电池 2

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Micro-spectrophotometer based on micro electro-mechanical systems technology

ZHOU Lianqun, LI Zhenggang, WU Yihui, ZHANG Ping, XUAN Ming, JIA Hongguang

《机械工程前沿（英文）》 2008年第3卷第1期页码 37-43 doi: 10.1007/s11465-008-0001-x

摘要： A new mini-spectrophotometer is developed by adopting micro-silicon-slit and micro-silicon-fixer, which are based on micro electro-mechanical systems (MEMS) technology. Both the micro-silicon-slit and the micro-silicon-fixer have their own features, such as small volume and high precision, which are laid out and analyzed later. Meantime, through the analysis of the sample cell’s optical characteristics that have some impacts on the linearity of the spectrophotometer, a relationship equation, which is about the impact of the refractive index of the sample cell and the tested medium on the variety of the transmitted light intensity and the absorbency, is put forward. When the water and the air are taken as the referenced medium, the experiments demonstrate that the difference of the refractive index of the references does not influence the correlation coefficient and the slope of the absorbency-concentration curve. The final results show that the new mini-spectrophotometer with micro-silicon-slit and micro-silicon-fixer is worked out, its correlation coefficient > 0.999, and its refractive index resolving power is better than 0.01.

关键词： mini-spectrophotometer referenced micro-silicon-fixer electro-mechanical correlation coefficient

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提高硅微谐振系统性能的一项有效措施

夏敦柱,王寿荣,周百令

《中国工程科学》 2006年第8卷第10期页码 71-74

摘要：

介绍了硅微谐振器系统的工作原理，重点给出了一种基于新型的DDS器件AD9954的智能谐振系统设计与实现。详细分析了AD9954作为智能精密驱动源的粗细搜索两种阶段工作流程并给出与DSP器件的数字接口技术。结合实验数据和扫频曲线，得出在不同真空度环境下谐振器的两种扫频结果，并对谐振系统的工作情况给予评价。

关键词：直接数字合成(DDS) 硅微谐振器 AD9954 数字信号处理(DSP)

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Porous silica synthesis out of coal fly ash with no residue generation and complete silicon separation

《环境科学与工程前沿（英文）》 2023年第17卷第9期 doi: 10.1007/s11783-023-1712-2

摘要：

● Both amorphous and crystalline silicon are completely separated from coal fly ash.

关键词： Coal fly ash Alkali fusion Micro-/meso-porous Si Zeolite MCM-48 Crystalline transformation

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A multi-probe micro-fabrication apparatus based on the friction-induced fabrication method

Zhijiang WU, Chenfei SONG, Jian GUO, Bingjun YU, Linmao QIAN

《机械工程前沿（英文）》 2013年第8卷第4期页码 333-339 doi: 10.1007/s11465-013-0276-4

摘要：

A novel multi-probe micro-fabrication apparatus was developed based on the friction-induced fabrication method. The main parts of the apparatus include actuating device, loading system, and control system. With a motorized linear stage, the maximum fabrication area of 50 mm × 50 mm can be achieved, and the maximum sliding speed of probes can be as high as 10 mm/s. Through locating steel micro balls into indents array, the preparation of multi-probe array can be realized by a simple and low-cost way. The cantilever was designed as a structure of deformable parallelogram with two beams, by which the fabrication force can be precisely controlled. Combining the friction-induced scanning with selective etching in KOH solution, various micro-patterns were fabricated on Si(100) surface without any masks or exposure. As a low-cost and high efficiency fabrication device, the multi-probe micro-fabrication apparatus may encourage the development of friction-induced fabrication method and shed new light on the texture engineering.

关键词： friction-induced fabrication silicon surface texture friction multi-probe

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用于微电子机械系统封装的体硅键合技术和薄膜密封技术

王渭源,王跃林

《中国工程科学》 2002年第4卷第6期页码 56-62

摘要：

对静电键合、体硅直接键合和界面层辅助键合等三种体硅键合技术，整片操作、局部操作和选择保护等三种密封技术，以及这些技术用于微电子机械系统的密封作了评述，强调在器件研究开始时应考虑封装问题，具体技术则应在保证器件功能和尽量减少芯片复杂性两者之间权衡决定。

关键词：体硅键合技术薄膜密封技术微电子机械系统封装技术

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Effects of nano-silicon and common silicon on lead uptake and translocation in two rice cultivars

Jianguo LIU,Hui CAI,Congcong MEI,Mingxin WANG

《环境科学与工程前沿（英文）》 2015年第9卷第5期页码 905-911 doi: 10.1007/s11783-015-0786-x

摘要： The current study investigated the effects of nano-silicon (Si) and common Si on lead (Pb) toxicity, uptake, translocation, and accumulation in the rice cultivars Yangdao 6 and Yu 44 grown in soil containing two different Pb levels (500 mg·kg and 1000 mg·kg ). The results showed that Si application alleviated the toxic effects of Pb on rice growth. Under soil Pb treatments of 500 and 1000 mg·kg , the biomasses of plants supplied with common Si and nano-Si were 1.8%–5.2% and 3.3%–11.8% higher, respectively, than those of plants with no Si supply (control). Compared to the control, Pb concentrations in rice shoots supplied with common Si and nano-Si were reduced by 14.3%–31.4% and 27.6%–54.0%, respectively. Pb concentrations in rice grains treated with common Si and nano-Si decreased by 21.3%–40.9% and 38.6%–64.8%, respectively. Pb translocation factors (TFs) from roots to shoots decreased by 15.0%–29.3% and 25.6%–50.8%, respectively. The TFs from shoots to grains reduced by 8.3%–13.7% and 15.3%–21.1%, respectively, after Si application. The magnitudes of the effects observed on plants decreased in the following order: nano-Si treatment>common Si treatment and high-grain-Pb-accumulating cultivar (Yangdao 6)>low-grain-Pb-accumulating cultivar (Yu 44) and heavy Pb stress (1000 mg·kg )>moderate Pb stress (500 mg·kg )>no Pb treatment. The results of the study indicate that nano-Si is more efficient than common Si in ameliorating the toxic effects of Pb on rice growth, preventing Pb transfer from rice roots to aboveground parts, and blocking Pb accumulation in rice grains, especially in high-Pb-accumulating rice cultivars and in heavily Pb-polluted soils.

关键词： silicon (Si) lead (Pb) rice (Oryza sativa L.) toxicity accumulation

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Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

《能源前沿（英文）》 2011年第5卷第3期页码 305-312 doi: 10.1007/s11708-011-0155-9

摘要： A computer simulator with a global model of heat transfer during crystal growth of Si for solar cells is developed. The convective, conductive, and radiative heat transfers in the furnace are solved together in a coupled manner using the finite volume method. A three-dimensional (3D) global heat transfer model with 3D features is especially made suitable for any crystal growth, while the requirement for computer resources is kept permissible for engineering applications. A structured/unstructured combined mesh scheme is proposed to improve the efficiency and accuracy of the simulation. A dynamic model for the melt-crystal (mc) interface is developed to predict the phase interface behavior in a crystal growth process. Dynamic models for impurities and precipitates are also incorporated into the simulator. Applications of the computer simulator to Czochralski (CZ) growth processes and directional solidification processes of Si crystals for solar cells are introduced. Some typical results, including the turbulent melt flow in a large-scale crucible of a CZ-Si process, the dynamic behaviors of the mc interface, and the transport and distributions of impurities and precipitates, such as oxygen, carbon, and SiC particles, are presented and discussed. The findings show the importance of computer modeling as an effective tool in the analysis and improvement of crystal growth processes and furnace designs for solar Si material.

关键词： computer modeling silicon crystal growth solar cells

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Atomistic understanding of interfacial processing mechanism of silicon in water environment: A ReaxFF

《机械工程前沿（英文）》 2021年第16卷第3期页码 570-579 doi: 10.1007/s11465-021-0642-6

摘要： The interfacial wear between silicon and amorphous silica in water environment is critical in numerous applications. However, the understanding regarding the micro dynamic process is still unclear due to the limitations of apparatus. Herein, reactive force field simulations are utilized to study the interfacial process between silicon and amorphous silica in water environment, exploring the removal and damage mechanism caused by pressure, velocity, and humidity. Moreover, the reasons for high removal rate under high pressure and high velocity are elucidated from an atomic perspective. Simulation results show that the substrate is highly passivated under high humidity, and the passivation layer could alleviate the contact between the abrasive and the substrate, thus reducing the damage and wear. In addition to more Si-O-Si bridge bonds formed between the abrasive and the substrate, new removal pathways such as multibridge bonds and chain removal appear under high pressure, which cause higher removal rate and severer damage. At a higher velocity, the abrasive can induce extended tribochemical reactions and form more interfacial Si-O-Si bridge bonds, hence increasing removal rate. These results reveal the internal cause of the discrepancy in damage and removal rate under different conditions from an atomic level.

关键词： silicon ReaxFF molecular dynamics friction damage

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Effect of extrusion temperature on the physical properties of high-silicon aluminum alloy

YANG Fuliang, GAN Weiping, CHEN Zhaoke

《机械工程前沿（英文）》 2007年第2卷第1期页码 120-124 doi: 10.1007/s11465-007-0021-y

摘要： Light-weight high-silicon aluminum alloys are used for electronic packaging in the aviation and space-flight industry. Al-30Si and Al-40Si are fabricated with air-atomization and vacuum-canning hot-extrusion process. The density, thermal conductivity, hermeticity and thermal expansion coefficients of the material are measured, and the relationship between extrusion temperature and properties is obtained. Experimental results show that the density of high-silicon aluminum alloys prepared with this method is as high as 99.64% of the theory density, and increases with elevating extrusion temperature. At the same time, thermal conductivity varies between 104-140 W/(m " K); with the extrusion temperature, thermal expansion coefficient also increases but within 13?10 (at 100?C) and hermeticity of the material is high to 10 order of magnitude.

关键词： coefficient hermeticity temperature relationship air-atomization

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硅及硅基半导体材料中杂质缺陷和表面的研究

屠海令

《中国工程科学》 2000年第2卷第1期页码 7-17

摘要：

随着超大规模集成电路设计线宽向深亚微米级（＜0.5μm）和亚四分之一微米级（＜0.25μm）发展，对半导体硅片及其它硅基材料的质量要求越来越高，研究上述材料中各种杂质的行为，控制缺陷类型及数量，提高晶体完整性，降低表面污染和采用缺陷工程的方法改善材料质量显得尤为重要。文章阐述了深亚微米级和亚四分之一微米级集成电路用大直径硅材料中铁、铜金属和氧、氢、氮非金属杂质元素的行为，点缺陷及其衍生缺陷的本质与控制方法，硅片表面形貌、表面污染与检测方法的研究热点。同时还介绍了外延硅、锗硅及绝缘体上硅（SOI）等硅基材料的特性、制备及工艺技术发展趋势，展望了跨世纪期间硅及硅基材料产业发展的技术经济前景。

关键词：硅片硅外延片锗硅绝缘体上硅杂质行为缺陷控制表面质量

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Laser enhanced gettering of silicon substrates

Daniel CHEN,Matthew EDWARDS,Stuart WENHAM,Malcolm ABBOTT,Brett HALLAM

《能源前沿（英文）》 2017年第11卷第1期页码 23-31 doi: 10.1007/s11708-016-0441-7

摘要： One challenge to the use of lightly-doped, high efficiency emitters on multicrystalline silicon wafers is the poor gettering efficiency of the diffusion processes used to fabricate them. With the photovoltaic industry highly reliant on heavily doped phosphorus diffusions as a source of gettering, the transition to selective emitter structures would require new alternative methods of impurity extraction. In this paper, a novel laser based method for gettering is investigated for its impact on commercially available silicon wafers used in the manufacturing of solar cells. Direct comparisons between laser enhanced gettering (LasEG) and lightly-doped emitter diffusion gettering demonstrate a 45% absolute improvement in bulk minority carrier lifetime when using the laser process. Although grain boundaries can be effective gettering sites in multicrystalline wafers, laser processing can substantially improve the performance of both grain boundary sites and intra-grain regions. This improvement is correlated with a factor of 6 further decrease in interstitial iron concentrations. The removal of such impurities from multicrystalline wafers using the laser process can result in intra-grain enhancements in implied open-circuit voltage of up to 40 mV. In instances where specific dopant profiles are required for a diffusion on one surface of a solar cell, and the diffusion process does not enable effective gettering, LasEG may enable improved gettering during the diffusion process.

关键词： gettering multicystaline silicon impurities laser doping

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Special issue: Technologies for future high-efficiency industrial silicon wafer solar cells

《能源前沿（英文）》 2017年第11卷第1期页码 1-3 doi: 10.1007/s11708-016-0436-4

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Flexible micro flow sensor for micro aerial vehicles

Rong ZHU, Ruiyi QUE, Peng LIU

《机械工程前沿（英文）》 2017年第12卷第4期页码 539-545 doi: 10.1007/s11465-017-0427-0

摘要：

This article summarizes our studies on micro flow sensors fabricated on a flexible polyimide circuit board by a low-cost hybrid process of thin-film deposition and circuit printing. The micro flow sensor has merits of flexibility, structural simplicity, easy integrability with circuits, and good sensing performance. The sensor, which adheres to an object surface, can detect the surface flow around the object. In our study, we install the fabricated micro flow sensors on micro aerial vehicles (MAVs) to detect the surface flow variation around the aircraft wing and deduce the aerodynamic parameters of the MAVs in flight. Wind tunnel experiments using the sensors integrated with the MAVs are also conducted.

关键词： micro flow sensor flexible sensor surface flow sensing aerodynamic parameter micro aerial vehicle (MAV)

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Erratum to: Enhancing the photoelectrochemical performance of p-silicon through TiO coating decorated

《能源前沿（英文）》 2022年第16卷第5期页码 876-877 doi: 10.1007/s11708-022-0832-x

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Effects of taping on grinding quality of silicon wafers in backgrinding

Zhigang DONG, Qian ZHANG, Haijun LIU, Renke KANG, Shang GAO

《机械工程前沿（英文）》 2021年第16卷第3期页码 559-569 doi: 10.1007/s11465-020-0624-0

摘要： Taping is often used to protect patterned wafers and reduce fragmentation during backgrinding of silicon wafers. Grinding experiments using coarse and fine resin-bond diamond grinding wheels were performed on silicon wafers with tapes of different thicknesses to investigate the effects of taping on peak-to-valley (PV), surface roughness, and subsurface damage of silicon wafers after grinding. Results showed that taping in backgrinding could provide effective protection for ground wafers from breakage. However, the PV value, surface roughness, and subsurface damage of silicon wafers with taping deteriorated compared with those without taping although the deterioration extents were very limited. The PV value of silicon wafers with taping decreased with increasing mesh size of the grinding wheel and the final thickness. The surface roughness and subsurface damage of silicon wafers with taping decreased with increasing mesh size of grinding wheel but was not affected by removal thickness. We hope the experimental finding could help fully understand the role of taping in backgrinding.

关键词： taping silicon wafer backgrinding subsurface damage surface roughness